دیتاشیت 2SB1132
مشخصات دیتاشیت
| نام دیتاشیت |
2SB1132
|
| حجم فایل |
81.75
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2SB1132
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Transistor Type:
PNP
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Collector Current (Ic):
1A
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Power Dissipation (Pd):
500mW
-
Collector-Emitter Breakdown Voltage (Vceo):
32V
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Package:
SOT-89-3
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Operating Temperature:
+150°C@(Tj)
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Transition Frequency (fT):
150MHz
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DC Current Gain (hFE@Ic,Vce):
120@100mA,3V
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Collector Cut-Off Current (Icbo):
500nA
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@500mA,50mA
